Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N5806TR
Manufacturer Part Number | 1N5806TR |
---|---|
Future Part Number | FT-1N5806TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
1N5806TR Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 150V |
Current - Average Rectified (Io) | 2.5A |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 25ns |
Current - Reverse Leakage @ Vr | 1µA @ 150V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | A, Axial |
Supplier Device Package | A-PAK |
Operating Temperature - Junction | -65°C ~ 175°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
1N5806TR Weight | Contact Us |
Replacement Part Number | 1N5806TR-FT |
APT10SCD65K
Microsemi Corporation
APT15D30KG
Microsemi Corporation
APT15D40KG
Microsemi Corporation
APT15S20KG
Microsemi Corporation
APT20SCD65K
Microsemi Corporation
MS1645
Microsemi Corporation
JANTX1N5615
Microsemi Corporation
JANS1N5806
Microsemi Corporation
JANTX1N5617
Microsemi Corporation
JANS1N5615
Microsemi Corporation
LCMXO2-4000ZE-3TG144C
Lattice Semiconductor Corporation
XC6SLX150-N3FG676I
Xilinx Inc.
APA600-PQG208I
Microsemi Corporation
EP1S10F484C5N
Intel
EP1S10F484C6
Intel
A54SX32A-TQ100M
Microsemi Corporation
LCMXO1200E-3M132I
Lattice Semiconductor Corporation
10AX090U3F45I2LG
Intel
5CGXFC4C6M13C7N
Intel
EP3C55F780C7
Intel