Manufacturer Part Number | 2N3563 |
---|---|
Future Part Number | FT-2N3563 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N3563 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | - |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Vce Saturation (Max) @ Ib, Ic | - |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA, 10V |
Power - Max | - |
Frequency - Transition | 600MHz |
Operating Temperature | - |
Mounting Type | Through Hole |
Package / Case | TO-106-3 Domed |
Supplier Device Package | TO-106 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N3563 Weight | Contact Us |
Replacement Part Number | 2N3563-FT |
2N6377
Microsemi Corporation
2N6383
Microsemi Corporation
2N6436
Microsemi Corporation
2N6438
Microsemi Corporation
2N6546
Microsemi Corporation
2N6547
Microsemi Corporation
2N656
Microsemi Corporation
2N657
Microsemi Corporation
2N6648
Microsemi Corporation
2N6649
Microsemi Corporation
XC2S50-6TQ144C
Xilinx Inc.
LCMXO2-7000ZE-2TG144I
Lattice Semiconductor Corporation
A54SX72A-FGG256A
Microsemi Corporation
M1A3P600-1FG256I
Microsemi Corporation
A40MX02-3PLG68
Microsemi Corporation
XC4013XL-1HT176I
Xilinx Inc.
EP3CLS100U484I7N
Intel
5SGXEA7K3F40C2
Intel
XC6VLX195T-2FFG784C
Xilinx Inc.
LCMXO2-4000ZE-2BG332I
Lattice Semiconductor Corporation