Manufacturer Part Number | 2N3583 |
---|---|
Future Part Number | FT-2N3583 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
2N3583 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 175V |
Vce Saturation (Max) @ Ib, Ic | 5V @ 125mA, 1A |
Current - Collector Cutoff (Max) | 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 10V |
Power - Max | 35W |
Frequency - Transition | 10MHz |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-213AA, TO-66-2 |
Supplier Device Package | TO-66 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
2N3583 Weight | Contact Us |
Replacement Part Number | 2N3583-FT |
FZT692BTC
Diodes Incorporated
FZT694BTC
Diodes Incorporated
FZT704TA
Diodes Incorporated
FZT717TC
Diodes Incorporated
FZT755TC
Diodes Incorporated
FZT757TC
Diodes Incorporated
FZT758TC
Diodes Incorporated
FZT788ATA
Diodes Incorporated
FZT788ATC
Diodes Incorporated
FZT788BTC
Diodes Incorporated
LFXP2-5E-6TN144I
Lattice Semiconductor Corporation
XC3S1200E-5FT256C
Xilinx Inc.
AGL600V5-FGG256I
Microsemi Corporation
A54SX08A-2PQG208
Microsemi Corporation
ICE40LP1K-QN84
Lattice Semiconductor Corporation
LFE5U-85F-8BG756C
Lattice Semiconductor Corporation
EP2AGX260EF29I5N
Intel
EPF10K50VBI356-4
Intel
EP20K160EQC240-3N
Intel
EPF10K30EQC208-2N
Intel