Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N5551RLRA

| Manufacturer Part Number | 2N5551RLRA |
|---|---|
| Future Part Number | FT-2N5551RLRA |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| 2N5551RLRA Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Power - Max | 625mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| 2N5551RLRA Weight | Contact Us |
| Replacement Part Number | 2N5551RLRA-FT |

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