Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / APT31M100B2
Manufacturer Part Number | APT31M100B2 |
---|---|
Future Part Number | FT-APT31M100B2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | POWER MOS 8™ |
APT31M100B2 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 8500pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1040W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | T-MAX™ [B2] |
Package / Case | TO-247-3 Variant |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
APT31M100B2 Weight | Contact Us |
Replacement Part Number | APT31M100B2-FT |
APT60N60BCSG
Microsemi Corporation
APT1204R7BFLLG
Microsemi Corporation
APT42F50B
Microsemi Corporation
APT8M100B
Microsemi Corporation
APT10090BLLG
Microsemi Corporation
APT7F120B
Microsemi Corporation
APT38N60BC6
Microsemi Corporation
APT47N60BC3G
Microsemi Corporation
APT30M70BVRG
Microsemi Corporation
APT53N60BC6
Microsemi Corporation