Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / AUIRF1018ES
Manufacturer Part Number | AUIRF1018ES |
---|---|
Future Part Number | FT-AUIRF1018ES |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HEXFET® |
AUIRF1018ES Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 47A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2290pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
AUIRF1018ES Weight | Contact Us |
Replacement Part Number | AUIRF1018ES-FT |
IPB100N04S303ATMA1
Infineon Technologies
IPB100N06S205ATMA4
Infineon Technologies
IPB120N04S401ATMA1
Infineon Technologies
IPB123N10N3GATMA1
Infineon Technologies
IPB320N20N3GATMA1
Infineon Technologies
IPB60R099C6ATMA1
Infineon Technologies
IPB60R125C6ATMA1
Infineon Technologies
IPB60R165CPATMA1
Infineon Technologies
IPB65R065C7ATMA2
Infineon Technologies
IPB70N10S312ATMA1
Infineon Technologies
XC2S200-5FGG456I
Xilinx Inc.
AX1000-2FGG484
Microsemi Corporation
LCMXO640E-5FTN256C
Lattice Semiconductor Corporation
EP1S20F672I7
Intel
XC7VX980T-1FFG1930C
Xilinx Inc.
A42MX16-PQG160I
Microsemi Corporation
LFE2-50E-6F484I
Lattice Semiconductor Corporation
LCMXO3L-2100C-5BG256I
Lattice Semiconductor Corporation
LFE3-35EA-7FN672I
Lattice Semiconductor Corporation
10AX057K4F40I3SG
Intel