Manufacturer Part Number | BC636TA |
---|---|
Future Part Number | FT-BC636TA |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BC636TA Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
Power - Max | 1W |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BC636TA Weight | Contact Us |
Replacement Part Number | BC636TA-FT |
ZTX788ASTOA
Diodes Incorporated
ZTX788ASTOB
Diodes Incorporated
ZTX788BSTOA
Diodes Incorporated
ZTX788BSTOB
Diodes Incorporated
ZTX789ASTOA
Diodes Incorporated
ZTX789ASTOB
Diodes Incorporated
ZTX790ASTOA
Diodes Incorporated
ZTX790ASTOB
Diodes Incorporated
ZTX792ASTOA
Diodes Incorporated
ZTX792ASTOB
Diodes Incorporated
LCMXO2-256ZE-1TG100C
Lattice Semiconductor Corporation
XC3S1000L-4FGG320C
Xilinx Inc.
M7A3P1000-PQG208
Microsemi Corporation
A1020B-PL68I
Microsemi Corporation
XC5VLX110T-2FFG1136C
Xilinx Inc.
M1AFS1500-2FGG676I
Microsemi Corporation
LFXP6C-3Q208I
Lattice Semiconductor Corporation
LFE2-20SE-6F256C
Lattice Semiconductor Corporation
10AX066H4F34I3LG
Intel
EP4SGX110FF35C4N
Intel