Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BCV29H6327XTSA1
Manufacturer Part Number | BCV29H6327XTSA1 |
---|---|
Future Part Number | FT-BCV29H6327XTSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
BCV29H6327XTSA1 Status (Lifecycle) | In Stock |
Part Status | Last Time Buy |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
Power - Max | 1W |
Frequency - Transition | 150MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | SOT-89-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCV29H6327XTSA1 Weight | Contact Us |
Replacement Part Number | BCV29H6327XTSA1-FT |
2SC4731S-AY
ON Semiconductor
2SC4731T-AY
ON Semiconductor
2SC4783-T1-A
Renesas Electronics America
2SC4837S-AY
ON Semiconductor
2SC4901YK-TL-E
Renesas Electronics America
2SC4901YK-TR-E
Renesas Electronics America
2SC4926YD-TL-E
Renesas Electronics America
2SC4942-T1-AZ
Renesas Electronics America
2SC5201(T6MURATAFM
Toshiba Semiconductor and Storage
2SC5201(TE6,F,M)
Toshiba Semiconductor and Storage
A3PE600-1FG256I
Microsemi Corporation
EPF8452ATC100-4
Intel
10M25DAF484I6G
Intel
5SGXEA3K2F40C3
Intel
5SGXEB6R3F43I3LN
Intel
XC6VLX240T-1FFG784I
Xilinx Inc.
A42MX09-2PL84I
Microsemi Corporation
LFXP10E-4F256I
Lattice Semiconductor Corporation
EP1S40F780I6
Intel
EPF10K50RI240-4
Intel