Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BCV29H6327XTSA1
Manufacturer Part Number | BCV29H6327XTSA1 |
---|---|
Future Part Number | FT-BCV29H6327XTSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
BCV29H6327XTSA1 Status (Lifecycle) | In Stock |
Part Status | Last Time Buy |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 100µA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
Power - Max | 1W |
Frequency - Transition | 150MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-243AA |
Supplier Device Package | SOT-89-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BCV29H6327XTSA1 Weight | Contact Us |
Replacement Part Number | BCV29H6327XTSA1-FT |
2SC4731S-AY
ON Semiconductor
2SC4731T-AY
ON Semiconductor
2SC4783-T1-A
Renesas Electronics America
2SC4837S-AY
ON Semiconductor
2SC4901YK-TL-E
Renesas Electronics America
2SC4901YK-TR-E
Renesas Electronics America
2SC4926YD-TL-E
Renesas Electronics America
2SC4942-T1-AZ
Renesas Electronics America
2SC5201(T6MURATAFM
Toshiba Semiconductor and Storage
2SC5201(TE6,F,M)
Toshiba Semiconductor and Storage
EP1C3T144A8N
Intel
LCMXO2280E-4T100C
Lattice Semiconductor Corporation
A3P1000-2FG484I
Microsemi Corporation
LCMXO1200C-4FTN256I
Lattice Semiconductor Corporation
10AX048H2F34E2LG
Intel
XC5VLX220-1FF1760C
Xilinx Inc.
XC4VLX160-11FF1148I
Xilinx Inc.
AX500-2FGG676I
Microsemi Corporation
LCMXO2-4000HC-6MG132I
Lattice Semiconductor Corporation
5CEFA7U19C6N
Intel