Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC019N02KSGAUMA1
Manufacturer Part Number | BSC019N02KSGAUMA1 |
---|---|
Future Part Number | FT-BSC019N02KSGAUMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
BSC019N02KSGAUMA1 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 1.95 mOhm @ 50A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs | 85nC @ 4.5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 13000pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TDSON-8 |
Package / Case | 8-PowerTDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSC019N02KSGAUMA1 Weight | Contact Us |
Replacement Part Number | BSC019N02KSGAUMA1-FT |
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