Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / CSD19536KTTT
Manufacturer Part Number | CSD19536KTTT |
---|---|
Future Part Number | FT-CSD19536KTTT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | NexFET™ |
CSD19536KTTT Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 153nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DDPAK/TO-263-3 |
Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
CSD19536KTTT Weight | Contact Us |
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