Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTB513ZMT2L
Manufacturer Part Number | DTB513ZMT2L |
---|---|
Future Part Number | FT-DTB513ZMT2L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
DTB513ZMT2L Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 100mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 260MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VMT3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
DTB513ZMT2L Weight | Contact Us |
Replacement Part Number | DTB513ZMT2L-FT |
RN2106ACT(TPL3)
Toshiba Semiconductor and Storage
RN2110ACT(TPL3)
Toshiba Semiconductor and Storage
RN2111ACT(TPL3)
Toshiba Semiconductor and Storage
RN2112ACT(TPL3)
Toshiba Semiconductor and Storage
RN2113ACT(TPL3)
Toshiba Semiconductor and Storage
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage
RN1101CT(TPL3)
Toshiba Semiconductor and Storage
RN1102ACT(TPL3)
Toshiba Semiconductor and Storage
RN1102CT(TPL3)
Toshiba Semiconductor and Storage
RN1103ACT(TPL3)
Toshiba Semiconductor and Storage
LFE2-12E-6TN144I
Lattice Semiconductor Corporation
LFE2-12E-5TN144C
Lattice Semiconductor Corporation
XC6SLX75T-3CSG484I
Xilinx Inc.
AFS600-1FG484
Microsemi Corporation
EPF10K250EFC672-1
Intel
5SGSMD3E2H29I3LN
Intel
5SGSMD4E2H29I3L
Intel
5SGXMA7H2F35C2LN
Intel
EP3SE110F1152C2N
Intel
EPF10K30EQI208-2N
Intel