Manufacturer Part Number | EM 1V |
---|---|
Future Part Number | FT-EM 1V |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EM 1V Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 400V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 970mV @ 1A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 10µA @ 400V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | Axial |
Supplier Device Package | - |
Operating Temperature - Junction | -40°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EM 1V Weight | Contact Us |
Replacement Part Number | EM 1V-FT |
CRS20I40A(TE85L,QM
Toshiba Semiconductor and Storage
CRS20I40B(TE85L,QM
Toshiba Semiconductor and Storage
CRS30I30A(TE85L,QM
Toshiba Semiconductor and Storage
CRS30I40A(TE85L,QM
Toshiba Semiconductor and Storage
D1030N22TXPSA1
Infineon Technologies
D1030N26TXPSA1
Infineon Technologies
D1230N12TXPSA1
Infineon Technologies
D1230N14TXPSA1
Infineon Technologies
D1230N16TXPSA1
Infineon Technologies
D1800N46TVFXPSA1
Infineon Technologies
A54SX16A-1TQ144I
Microsemi Corporation
XC7A75T-3FGG484E
Xilinx Inc.
M1A3P1000L-1FGG484I
Microsemi Corporation
APA1000-CQ352M
Microsemi Corporation
EP2C8F256C8N
Intel
5SGXEBBR1H43C2L
Intel
XC2V2000-4FFG896C
Xilinx Inc.
LCMXO256E-4M100C
Lattice Semiconductor Corporation
EP1S10F780C6
Intel
EP4SGX110HF35I3
Intel