Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / ES2BA R3G
Manufacturer Part Number | ES2BA R3G |
---|---|
Future Part Number | FT-ES2BA R3G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
ES2BA R3G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) | 2A |
Voltage - Forward (Vf) (Max) @ If | 950mV @ 2A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 35ns |
Current - Reverse Leakage @ Vr | 10µA @ 100V |
Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | DO-214AC, SMA |
Supplier Device Package | DO-214AC (SMA) |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
ES2BA R3G Weight | Contact Us |
Replacement Part Number | ES2BA R3G-FT |
SS22LHR3G
Taiwan Semiconductor Corporation
SS23L R3G
Taiwan Semiconductor Corporation
SS23LHR3G
Taiwan Semiconductor Corporation
SS23LHRUG
Taiwan Semiconductor Corporation
SS24L R3G
Taiwan Semiconductor Corporation
SS24LHR3G
Taiwan Semiconductor Corporation
SS25L R3G
Taiwan Semiconductor Corporation
SS25LHR3G
Taiwan Semiconductor Corporation
SS26L R3G
Taiwan Semiconductor Corporation
SS26L RVG
Taiwan Semiconductor Corporation
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel