Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCH104N60F
Manufacturer Part Number | FCH104N60F |
---|---|
Future Part Number | FT-FCH104N60F |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | HiPerFET™, Polar™ |
FCH104N60F Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 104 mOhm @ 18.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 139nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5950pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 357W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FCH104N60F Weight | Contact Us |
Replacement Part Number | FCH104N60F-FT |
GP2M023A050N
Global Power Technologies Group
GP1M003A050FG
Global Power Technologies Group
GP1M003A080FH
Global Power Technologies Group
GP1M004A090FH
Global Power Technologies Group
GP1M005A050FH
Global Power Technologies Group
GP1M005A050FSH
Global Power Technologies Group
GP1M006A065F
Global Power Technologies Group
GP1M006A065FH
Global Power Technologies Group
GP1M006A070F
Global Power Technologies Group
GP1M006A070FH
Global Power Technologies Group
XC3S500E-4PQ208I
Xilinx Inc.
5SGSMD5K2F40C2L
Intel
LCMXO2-7000HC-4BG332C
Lattice Semiconductor Corporation
LCMXO2-7000HE-4BG332C
Lattice Semiconductor Corporation
LFE3-95EA-6FN672I
Lattice Semiconductor Corporation
LFE3-35EA-8FN484I
Lattice Semiconductor Corporation
LCMXO3L-4300E-6MG121I
Lattice Semiconductor Corporation
5CEFA4U19A7N
Intel
EPF10K20RC240-3N
Intel
EP20K1000EFC33-3
Intel