Home / Products / Discrete Semiconductor Products / Diodes - RF / HBAT-540B-TR1
Manufacturer Part Number | HBAT-540B-TR1 |
---|---|
Future Part Number | FT-HBAT-540B-TR1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
HBAT-540B-TR1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Schottky - Single |
Voltage - Peak Reverse (Max) | 30V |
Current - Max | 430mA |
Capacitance @ Vr, F | - |
Resistance @ If, F | - |
Power Dissipation (Max) | 825mW |
Operating Temperature | 150°C (TJ) |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SOT-323 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
HBAT-540B-TR1 Weight | Contact Us |
Replacement Part Number | HBAT-540B-TR1-FT |
BA 895 E6327
Infineon Technologies
BA892H6127XTSA1
Infineon Technologies
BA892H6327XTSA1
Infineon Technologies
BA892H6433XTMA1
Infineon Technologies
BA892H6770XTSA1
Infineon Technologies
BA895H6327XTSA1
Infineon Technologies
BAR 63-02W E6127
Infineon Technologies
BAR 63-02W E6327
Infineon Technologies
BAR 63-02W E6433
Infineon Technologies
BAR 63-02W H6433
Infineon Technologies
XCV600-6FG676C
Xilinx Inc.
XCVU095-2FFVD1517I
Xilinx Inc.
AGL400V5-FGG256I
Microsemi Corporation
LFE2M100E-7F1152C
Lattice Semiconductor Corporation
10M08DCF256A7G
Intel
10CL010YM164I7G
Intel
XA6SLX45-2CSG324I
Xilinx Inc.
LCMXO2-7000ZE-3BG332I
Lattice Semiconductor Corporation
EP2AGX95EF35I3
Intel
EP1S30F780C6
Intel