Home / Products / Discrete Semiconductor Products / Diodes - RF / HSMS-8209-TR1
Manufacturer Part Number | HSMS-8209-TR1 |
---|---|
Future Part Number | FT-HSMS-8209-TR1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
HSMS-8209-TR1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Type | Schottky - Cross Over |
Voltage - Peak Reverse (Max) | 4V |
Current - Max | - |
Capacitance @ Vr, F | 0.26pF @ 0V, 1MHz |
Resistance @ If, F | 14 Ohm @ 5mA, 1MHz |
Power Dissipation (Max) | 75mW |
Operating Temperature | 150°C (TJ) |
Package / Case | TO-253-4, TO-253AA |
Supplier Device Package | SOT-143-4 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
HSMS-8209-TR1 Weight | Contact Us |
Replacement Part Number | HSMS-8209-TR1-FT |
BAR 65-02V E6327
Infineon Technologies
BAR 67-02V E6327
Infineon Technologies
BAR 88-02V E6127
Infineon Technologies
BAR 88-02V E6327
Infineon Technologies
BAT 63-02V E6327
Infineon Technologies
BAR6303WE6327HTSA1
Infineon Technologies
BA592E6327HTSA1
Infineon Technologies
BAR6403WE6327HTSA1
Infineon Technologies
BAR6503WE6327HTSA1
Infineon Technologies
BAT1503WE6327HTSA1
Infineon Technologies
A1010B-VQ80I
Microsemi Corporation
XC3S1600E-4FG484I
Xilinx Inc.
EP3SE110F1152I3N
Intel
XC2VP4-5FFG672C
Xilinx Inc.
A3P1000-FGG144M
Microsemi Corporation
LCMXO1200E-3MN132C
Lattice Semiconductor Corporation
5CGXFC7C6U19I7N
Intel
10AX090N3F45I2LG
Intel
EP2AGX45DF29I5N
Intel
EP2C5Q208C7
Intel