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Infineon Technologies IPB120N04S4L02ATMA1

Name: IPB120N04S4L02ATMA1
Brand: Infineon Technologies
SKU: IPB120N04S4L02ATMA1
Price: 0.937096 USD
Availability: InStock
Rating: 4.7 (756 reviews)

MFG Part Number: IPB120N04S4L02ATMA1

Available Quantity: 14680 Pieces

Reference Price: USD 0.937096

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: Automotive, AEC-Q101, OptiMOS™ MOSFET N-CH TO263-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPB120N04S4L02ATMA1.pdf

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IPB120N04S4L02ATMA1 Specifications

Manufacturer Part Number	IPB120N04S4L02ATMA1
Future Part Number	FT-IPB120N04S4L02ATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101, OptiMOS™
IPB120N04S4L02ATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.7 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	14560pF @ 25V
FET Feature	-
Power Dissipation (Max)	158W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPB120N04S4L02ATMA1 Weight	Contact Us
Replacement Part Number	IPB120N04S4L02ATMA1-FT

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