Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB80N06S2L07ATMA3
Manufacturer Part Number | IPB80N06S2L07ATMA3 |
---|---|
Future Part Number | FT-IPB80N06S2L07ATMA3 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPB80N06S2L07ATMA3 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.7 mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id | 2V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3160pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 210W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB80N06S2L07ATMA3 Weight | Contact Us |
Replacement Part Number | IPB80N06S2L07ATMA3-FT |
IPB50R140CPATMA1
Infineon Technologies
IPB50R199CPATMA1
Infineon Technologies
IPB50R250CPATMA1
Infineon Technologies
IPB50R299CPATMA1
Infineon Technologies
IPB530N15N3GATMA1
Infineon Technologies
IPB60R060P7ATMA1
Infineon Technologies
IPB60R080P7ATMA1
Infineon Technologies
IPB60R099CPAATMA1
Infineon Technologies
IPB60R099CPATMA1
Infineon Technologies
IPB60R099P7ATMA1
Infineon Technologies
XCVU095-2FFVD1517I
Xilinx Inc.
AGL1000V2-FG256T
Microsemi Corporation
A42MX24-2PQ208I
Microsemi Corporation
ICE5LP4K-SWG36ITR
Lattice Semiconductor Corporation
A42MX09-1VQ100
Microsemi Corporation
10CL016YU256I7G
Intel
EP3C10F256I7
Intel
LCMXO2-7000HE-6FTG256C
Lattice Semiconductor Corporation
10AX066K1F35E1SG
Intel
EP2AGX65CU17C4
Intel