Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IRG8P50N120KD-EPBF
Manufacturer Part Number | IRG8P50N120KD-EPBF |
---|---|
Future Part Number | FT-IRG8P50N120KD-EPBF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
IRG8P50N120KD-EPBF Status (Lifecycle) | In Stock |
Part Status | Obsolete |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 80A |
Current - Collector Pulsed (Icm) | 105A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 35A |
Power - Max | 350W |
Switching Energy | 2.3mJ (on), 1.9mJ (off) |
Input Type | Standard |
Gate Charge | 315nC |
Td (on/off) @ 25°C | 35ns/190ns |
Test Condition | 600V, 35A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | 170ns |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247AD |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IRG8P50N120KD-EPBF Weight | Contact Us |
Replacement Part Number | IRG8P50N120KD-EPBF-FT |
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