Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFN200N10P
Manufacturer Part Number | IXFN200N10P |
---|---|
Future Part Number | FT-IXFN200N10P |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Polar™ |
IXFN200N10P Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 235nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7600pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 680W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IXFN200N10P Weight | Contact Us |
Replacement Part Number | IXFN200N10P-FT |
IXFH40N30
IXYS
IXFH40N30Q
IXYS
IXFH40N50Q
IXYS
IXFH40N50Q2
IXYS
IXFH4N100Q
IXYS
IXFH58N20Q
IXYS
IXFH60N20
IXYS
IXFH60N25Q
IXYS
IXFH66N20Q
IXYS
IXFH67N10
IXYS
XCV1000E-8FG900C
Xilinx Inc.
LCMXO640C-4FTN256I
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG484I
Lattice Semiconductor Corporation
M1AGL250V2-VQ100
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
EP2S60F484C5
Intel
5SGXMA7K3F40C3
Intel
XC4020E-2HQ208I
Xilinx Inc.
5AGXMA7G4F35I5N
Intel
EPF8820QC160-4
Intel