Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / JAN1N5819-1
Manufacturer Part Number | JAN1N5819-1 |
---|---|
Future Part Number | FT-JAN1N5819-1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/586 |
JAN1N5819-1 Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 45V |
Current - Average Rectified (Io) | 1A |
Voltage - Forward (Vf) (Max) @ If | 490mV @ 1A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 50µA @ 45V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | DO-204AL, DO-41, Axial |
Supplier Device Package | DO-41 |
Operating Temperature - Junction | -65°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN1N5819-1 Weight | Contact Us |
Replacement Part Number | JAN1N5819-1-FT |
APT60S20BG
Microsemi Corporation
APT30S20BG
Microsemi Corporation
APT60D60BG
Microsemi Corporation
APT75DQ60BG
Microsemi Corporation
MSC020SDA120B
Microsemi Corporation
APT30DQ100BG
Microsemi Corporation
APT60D100BG
Microsemi Corporation
APT30DQ120BG
Microsemi Corporation
APT60DQ60BG
Microsemi Corporation
MSC015SDA120B
Microsemi Corporation
XC4010XL-1TQ144C
Xilinx Inc.
XC6SLX150-N3FG900C
Xilinx Inc.
A3P250-1VQG100I
Microsemi Corporation
A3PN250-Z1VQG100
Microsemi Corporation
EP4CGX50DF27C8N
Intel
5SGXEA5K3F35C2N
Intel
XC5VLX110T-2FF1136I
Xilinx Inc.
LCMXO2-4000HC-4BG256I
Lattice Semiconductor Corporation
5AGXFB3H4F35I3N
Intel
EP2AGX45DF29C6N
Intel