Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N3506A
Manufacturer Part Number | JAN2N3506A |
---|---|
Future Part Number | FT-JAN2N3506A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/349 |
JAN2N3506A Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 2.5A |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1.5A, 2V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package | TO-39 (TO-205AD) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N3506A Weight | Contact Us |
Replacement Part Number | JAN2N3506A-FT |
JAN2N2221AL
Microsemi Corporation
JAN2N2221AUA
Microsemi Corporation
JAN2N2221AUB
Microsemi Corporation
JAN2N2369AUA
Microsemi Corporation
JAN2N2369AUB
Microsemi Corporation
JAN2N2484UA
Microsemi Corporation
JAN2N2484UB
Microsemi Corporation
JAN2N2904
Microsemi Corporation
JAN2N2904A
Microsemi Corporation
JAN2N2904AL
Microsemi Corporation
XC3164A-3TQ144C
Xilinx Inc.
LCMXO1200C-3T144I
Lattice Semiconductor Corporation
XA7A25T-2CSG325I
Xilinx Inc.
M1A3P600-PQ208
Microsemi Corporation
5SEE9F45C2N
Intel
EP2SGX90EF1152C4ES
Intel
XC2V1500-5BGG575C
Xilinx Inc.
XC5VLX110-2FF1760C
Xilinx Inc.
LCMXO2-2000HC-5MG132C
Lattice Semiconductor Corporation
EP2AGX190EF29C5N
Intel