Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / JAN2N4957
Manufacturer Part Number | JAN2N4957 |
---|---|
Future Part Number | FT-JAN2N4957 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
JAN2N4957 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 3.5dB @ 450MHz |
Gain | 25dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
Current - Collector (Ic) (Max) | 30mA |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-72-3 Metal Can |
Supplier Device Package | TO-72 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N4957 Weight | Contact Us |
Replacement Part Number | JAN2N4957-FT |
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