Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / JANTX2N2857UB
Manufacturer Part Number | JANTX2N2857UB |
---|---|
Future Part Number | FT-JANTX2N2857UB |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
JANTX2N2857UB Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Frequency - Transition | - |
Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
Gain | 21dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA, 1V |
Current - Collector (Ic) (Max) | 40mA |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, No Lead |
Supplier Device Package | UB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTX2N2857UB Weight | Contact Us |
Replacement Part Number | JANTX2N2857UB-FT |
60158
Microsemi Corporation
60159
Microsemi Corporation
60168
Microsemi Corporation
60180
Microsemi Corporation
60189
Microsemi Corporation
60205
Microsemi Corporation
60206
Microsemi Corporation
61032Q
Microsemi Corporation
61044
Microsemi Corporation
61045
Microsemi Corporation
A54SX08-2TQ144
Microsemi Corporation
EPF10K10ATI144-3N
Intel
XC2VP4-5FGG256C
Xilinx Inc.
M2GL090T-1FCSG325
Microsemi Corporation
A54SX08A-FG144
Microsemi Corporation
5CGXFC4C6F27I7N
Intel
EP3C25U256I7
Intel
XC5VFX70T-2FFG665C
Xilinx Inc.
10AX057K2F40I2SG
Intel
EP1S40F780C8N
Intel