Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / JANTXV2N6770T1
Manufacturer Part Number | JANTXV2N6770T1 |
---|---|
Future Part Number | FT-JANTXV2N6770T1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/543 |
JANTXV2N6770T1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-254AA |
Package / Case | TO-254-3, TO-254AA (Straight Leads) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTXV2N6770T1 Weight | Contact Us |
Replacement Part Number | JANTXV2N6770T1-FT |
JAN2N6762
Microsemi Corporation
JAN2N6764
Microsemi Corporation
JAN2N6764T1
Microsemi Corporation
JAN2N6766
Microsemi Corporation
JAN2N6766T1
Microsemi Corporation
JAN2N6768
Microsemi Corporation
JAN2N6768T1
Microsemi Corporation
JAN2N6770
Microsemi Corporation
JAN2N6770T1
Microsemi Corporation
JAN2N6782
Microsemi Corporation
A3PE600-2FGG484I
Microsemi Corporation
M1A3P600-2PQ208
Microsemi Corporation
LFE3-35EA-8LFTN256C
Lattice Semiconductor Corporation
AGLN060V5-ZVQ100
Microsemi Corporation
10M25DAF256C7G
Intel
EP3SE260F1152I3
Intel
LCMXO640C-4M100C
Lattice Semiconductor Corporation
EP3SE110F780C2
Intel
10AX048E2F29I1HG
Intel
EP20K60EQC208-1
Intel