Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / KSC1008GBU
Manufacturer Part Number | KSC1008GBU |
---|---|
Future Part Number | FT-KSC1008GBU |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
KSC1008GBU Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 700mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA, 2V |
Power - Max | 800mW |
Frequency - Transition | 50MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
KSC1008GBU Weight | Contact Us |
Replacement Part Number | KSC1008GBU-FT |
BC558B_J18Z
ON Semiconductor
BC558C
ON Semiconductor
BC558CBU
ON Semiconductor
BC559
ON Semiconductor
BC559ABU
ON Semiconductor
BC559B
ON Semiconductor
BC559BBU
ON Semiconductor
BC559BU
ON Semiconductor
BC559C,116
NXP USA Inc.
BC559CBU
ON Semiconductor
EPF10K10ATC144-3N
Intel
XC2S150-6FG456C
Xilinx Inc.
LFE2-12SE-5QN208C
Lattice Semiconductor Corporation
A3P250-2FGG256I
Microsemi Corporation
M7A3P1000-1FGG256
Microsemi Corporation
ICE65L08F-TCB132I
Lattice Semiconductor Corporation
EP4CE15E22I7N
Intel
LFE3-95EA-6LFN672I
Lattice Semiconductor Corporation
EP4CE30F29C6N
Intel
EP20K1000CF33C8N
Intel