Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / MBR10150HC0G
Manufacturer Part Number | MBR10150HC0G |
---|---|
Future Part Number | FT-MBR10150HC0G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
MBR10150HC0G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 150V |
Current - Average Rectified (Io) | 10A |
Voltage - Forward (Vf) (Max) @ If | 1.05V @ 10A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 100µA @ 150V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220AC |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MBR10150HC0G Weight | Contact Us |
Replacement Part Number | MBR10150HC0G-FT |
MBR735HC0G
Taiwan Semiconductor Corporation
MBR750 C0G
Taiwan Semiconductor Corporation
MBR750HC0G
Taiwan Semiconductor Corporation
MBR760 C0G
Taiwan Semiconductor Corporation
MBR760HC0G
Taiwan Semiconductor Corporation
MBR790 C0G
Taiwan Semiconductor Corporation
MBR790HC0G
Taiwan Semiconductor Corporation
MUR820HC0G
Taiwan Semiconductor Corporation
MUR840 C0G
Taiwan Semiconductor Corporation
MUR840HC0G
Taiwan Semiconductor Corporation
LCMXO2-4000ZE-3TG144C
Lattice Semiconductor Corporation
XC6SLX150-N3FG676I
Xilinx Inc.
APA600-PQG208I
Microsemi Corporation
EP1S10F484C5N
Intel
EP1S10F484C6
Intel
A54SX32A-TQ100M
Microsemi Corporation
LCMXO1200E-3M132I
Lattice Semiconductor Corporation
10AX090U3F45I2LG
Intel
5CGXFC4C6M13C7N
Intel
EP3C55F780C7
Intel