Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / MBR600200CTR
Manufacturer Part Number | MBR600200CTR |
---|---|
Future Part Number | FT-MBR600200CTR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MBR600200CTR Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Configuration | 1 Pair Common Anode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 200V |
Current - Average Rectified (Io) (per Diode) | 300A |
Voltage - Forward (Vf) (Max) @ If | 920mV @ 300A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 3mA @ 200V |
Operating Temperature - Junction | -55°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Twin Tower |
Supplier Device Package | Twin Tower |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MBR600200CTR Weight | Contact Us |
Replacement Part Number | MBR600200CTR-FT |
MBR2X080A080
GeneSiC Semiconductor
MBR2X080A120
GeneSiC Semiconductor
MBR2X080A150
GeneSiC Semiconductor
MBR2X080A180
GeneSiC Semiconductor
MBR2X080A200
GeneSiC Semiconductor
MBR2X100A045
GeneSiC Semiconductor
MBR2X100A060
GeneSiC Semiconductor
MBR2X100A080
GeneSiC Semiconductor
MBR2X100A100
GeneSiC Semiconductor
MBR2X100A120
GeneSiC Semiconductor
XA6SLX25-3FGG484Q
Xilinx Inc.
M1A3P250-2PQG208I
Microsemi Corporation
EP20K300EFC672-1
Intel
10CL055YU484I7G
Intel
EP3SL50F484C4L
Intel
5SGXEA7N3F45I3LN
Intel
XA6SLX9-2CSG225Q
Xilinx Inc.
AGL125V2-FGG144
Microsemi Corporation
LFXP2-5E-7FTN256C
Lattice Semiconductor Corporation
LFE2-12SE-5FN484I
Lattice Semiconductor Corporation