Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / MBRB30H35CTHE3_A/P
Manufacturer Part Number | MBRB30H35CTHE3_A/P |
---|---|
Future Part Number | FT-MBRB30H35CTHE3_A/P |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
MBRB30H35CTHE3_A/P Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 35V |
Current - Average Rectified (Io) (per Diode) | 15A |
Voltage - Forward (Vf) (Max) @ If | 620mV @ 15A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 80µA @ 35V |
Operating Temperature - Junction | -65°C ~ 175°C |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MBRB30H35CTHE3_A/P Weight | Contact Us |
Replacement Part Number | MBRB30H35CTHE3_A/P-FT |
MAD1105E3/TU
Microsemi Corporation
MAD1106E3/TU
Microsemi Corporation
MAD1107E3/TU
Microsemi Corporation
MB20H90CTHE3_A/I
Vishay Semiconductor Diodes Division
MB20H90CTHE3_A/P
Vishay Semiconductor Diodes Division
MB30H90CTHE3_A/I
Vishay Semiconductor Diodes Division
MB30H90CTHE3_A/P
Vishay Semiconductor Diodes Division
MBR10100CD-E1
Diodes Incorporated
MBR10100CS2-E1
Diodes Incorporated
MBR10100CS2TR-E1
Diodes Incorporated
LFE2-6E-5TN144C
Lattice Semiconductor Corporation
XC2S200-5FG256C
Xilinx Inc.
EP4CE15F23C7
Intel
5SGXMA7N3F40I4N
Intel
5SGXEABK2H40C2L
Intel
XC4VFX20-10FFG672I
Xilinx Inc.
LCMXO3L-2100C-6BG256C
Lattice Semiconductor Corporation
ICE40LP384-CM81TR
Lattice Semiconductor Corporation
EP3CLS70F780C8
Intel
10AX048E2F29I1SG
Intel