Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MPSH10RLRA
Manufacturer Part Number | MPSH10RLRA |
---|---|
Future Part Number | FT-MPSH10RLRA |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MPSH10RLRA Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 25V |
Frequency - Transition | 650MHz |
Noise Figure (dB Typ @ f) | - |
Gain | - |
Power - Max | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
Current - Collector (Ic) (Max) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package | TO-92-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MPSH10RLRA Weight | Contact Us |
Replacement Part Number | MPSH10RLRA-FT |
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