Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / MSB709-RT1G
Manufacturer Part Number | MSB709-RT1G |
---|---|
Future Part Number | FT-MSB709-RT1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MSB709-RT1G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA, 10V |
Power - Max | 200mW |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SC-59 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MSB709-RT1G Weight | Contact Us |
Replacement Part Number | MSB709-RT1G-FT |
MMBTA64LT3G
ON Semiconductor
MSA1162GT1G
ON Semiconductor
NSVBC847BLT3G
ON Semiconductor
NSVBC850CLT1G
ON Semiconductor
NSVBC857BLT3G
ON Semiconductor
NSVBCW32LT1G
ON Semiconductor
NSVMMBT5087LT3G
ON Semiconductor
NSVMMBT5088LT3G
ON Semiconductor
NSVMMBT5401LT3G
ON Semiconductor
SBC807-25LT3G
ON Semiconductor
M2GL050T-FCSG325
Microsemi Corporation
A42MX36-1CQ256
Microsemi Corporation
5SGXEA3K1F40C2N
Intel
EP4SE360H29C3N
Intel
10AX032E3F27E2LG
Intel
10AX022E4F29I3LG
Intel
XA7A35T-1CPG236Q
Xilinx Inc.
LCMXO2-2000ZE-2FTG256I
Lattice Semiconductor Corporation
EP3SE110F780C2N
Intel
EP3SL110F780I4L
Intel