Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / MSD2714AT1G

            | Manufacturer Part Number | MSD2714AT1G | 
|---|---|
| Future Part Number | FT-MSD2714AT1G | 
| SPQ / MOQ | Contact Us | 
| Packing Material | Reel/Tray/Tube/Others | 
| Series | - | 
| MSD2714AT1G Status (Lifecycle) | In Stock | 
| Part Status | Obsolete | 
| Transistor Type | NPN | 
| Voltage - Collector Emitter Breakdown (Max) | 25V | 
| Frequency - Transition | 650MHz | 
| Noise Figure (dB Typ @ f) | - | 
| Gain | - | 
| Power - Max | 225mW | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 1mA, 6V | 
| Current - Collector (Ic) (Max) | - | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 
| Supplier Device Package | SC-59 | 
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN | 
| MSD2714AT1G Weight | Contact Us | 
| Replacement Part Number | MSD2714AT1G-FT | 

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