Home / Products / Integrated Circuits (ICs) / Memory / MT29F4G08ABADAWP-E:D
Manufacturer Part Number | MT29F4G08ABADAWP-E:D |
---|---|
Future Part Number | FT-MT29F4G08ABADAWP-E:D |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT29F4G08ABADAWP-E:D Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND |
Memory Size | 4Gb (512M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT29F4G08ABADAWP-E:D Weight | Contact Us |
Replacement Part Number | MT29F4G08ABADAWP-E:D-FT |
MT29F2G16ABBEAH4-IT:E TR
Micron Technology Inc.
MT29F2G16ABBEAHC:E TR
Micron Technology Inc.
MT29F2G16ABBEAM69A3WC1
Micron Technology Inc.
MT29F2G16ABBFAH4:F
Micron Technology Inc.
MT29F2G16ABBFAH4:F TR
Micron Technology Inc.
MT29F2T08CQCBBG2-37ES:B TR
Micron Technology Inc.
MT29F2T08CQHBBG2-3R:B
Micron Technology Inc.
MT29F2T08CQHBBG2-3R:B TR
Micron Technology Inc.
MT29F2T08CQHBBG2-3RES:B TR
Micron Technology Inc.
MT29F2T08CTCBBJ7-6C:B
Micron Technology Inc.
M2GL025TS-1FGG484I
Microsemi Corporation
A54SX16A-FFG256
Microsemi Corporation
MPF200T-FCG484E
Microsemi Corporation
5CGXFC5C6F27C7N
Intel
5SGSED6N1F45C2LN
Intel
5SGXEB9R3H43C2L
Intel
A42MX24-1PQG160M
Microsemi Corporation
10M16DCU324A7G
Intel
5AGXMA1D6F31C6N
Intel
EP20K100EBC356-3N
Intel