Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / MUN5135DW1T1G
Manufacturer Part Number | MUN5135DW1T1G |
---|---|
Future Part Number | FT-MUN5135DW1T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN5135DW1T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5135DW1T1G Weight | Contact Us |
Replacement Part Number | MUN5135DW1T1G-FT |
NSBA114TDXV6T5
ON Semiconductor
NSBA114YDXV6T1
ON Semiconductor
NSBA123EDXV6T1
ON Semiconductor
NSBA123JDXV6T1
ON Semiconductor
NSBA123JDXV6T1G
ON Semiconductor
NSBA124EDXV6T1
ON Semiconductor
NSBA124EDXV6T5G
ON Semiconductor
NSBA124XDXV6T1
ON Semiconductor
NSBA143EDXV6T1
ON Semiconductor
NSBA143TDXV6T1
ON Semiconductor
XC2S100-5PQ208I
Xilinx Inc.
M1AFS250-FG256
Microsemi Corporation
LFE5UM-45F-8BG381C
Lattice Semiconductor Corporation
5SGXEA5K3F40C4N
Intel
10CX150YF672I5G
Intel
5SGSMD6N1F45C2LN
Intel
XC4VLX100-12FF1148C
Xilinx Inc.
M7A3P1000-FGG144I
Microsemi Corporation
EPF10K50RC240-4
Intel
EP20K100QC208-3V
Intel