Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / MUN5315DW1T1G
Manufacturer Part Number | MUN5315DW1T1G |
---|---|
Future Part Number | FT-MUN5315DW1T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN5315DW1T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5315DW1T1G Weight | Contact Us |
Replacement Part Number | MUN5315DW1T1G-FT |
NSBC114EDXV6T5G
ON Semiconductor
NSBC124EDXV6T5G
ON Semiconductor
NSBC113EPDXV6T1G
ON Semiconductor
NSVBC143ZPDXV6T1G
ON Semiconductor
EMF5XV6T5G
ON Semiconductor
NSVBC143TPDXV6T1G
ON Semiconductor
NSVBC114EDXV6T1G
ON Semiconductor
NSBC114YPDXV6T5G
ON Semiconductor
NSBC123JPDXV6T5G
ON Semiconductor
NSBC144EDXV6T5G
ON Semiconductor
XC2S150-6PQG208C
Xilinx Inc.
XC3S400-5PQG208C
Xilinx Inc.
AFS1500-FG256
Microsemi Corporation
A3P600-2PQ208
Microsemi Corporation
MPF300TL-FCG1152E
Microsemi Corporation
EP20K200EFC672-1
Intel
EP2AGX125DF25C5
Intel
10M40DAF672I7G
Intel
5SGXEA7H2F35C3N
Intel
XC6VLX240T-1FF784C
Xilinx Inc.