Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Arrays / MUR20010CT
Manufacturer Part Number | MUR20010CT |
---|---|
Future Part Number | FT-MUR20010CT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUR20010CT Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) (per Diode) | 200A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 100A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 75ns |
Current - Reverse Leakage @ Vr | 25µA @ 50V |
Operating Temperature - Junction | -55°C ~ 150°C |
Mounting Type | Chassis Mount |
Package / Case | Twin Tower |
Supplier Device Package | Twin Tower |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUR20010CT Weight | Contact Us |
Replacement Part Number | MUR20010CT-FT |
MBRTA50030R
GeneSiC Semiconductor
MBRTA50035
GeneSiC Semiconductor
MBRTA50035R
GeneSiC Semiconductor
MBRTA50040
GeneSiC Semiconductor
MBRTA50040R
GeneSiC Semiconductor
MBRTA50045
GeneSiC Semiconductor
MBRTA50045R
GeneSiC Semiconductor
MBRTA50060
GeneSiC Semiconductor
MBRTA50060R
GeneSiC Semiconductor
MBRTA50080
GeneSiC Semiconductor
LCMXO2-1200ZE-1TG100C
Lattice Semiconductor Corporation
XC4005E-4PQ208I
Xilinx Inc.
M2GL090-1FCSG325I
Microsemi Corporation
XC6SLX25T-3FGG484I
Xilinx Inc.
A54SX08A-2PQG208
Microsemi Corporation
LCMXO3L-2100E-5UWG49CTR1K
Lattice Semiconductor Corporation
EP4CE75F23I7
Intel
EP2SGX60EF1152I4N
Intel
A3P250-1FGG144T
Microsemi Corporation
EP1AGX35DF780C6N
Intel