Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE68039-T1-R46-A
Manufacturer Part Number | NE68039-T1-R46-A |
---|---|
Future Part Number | FT-NE68039-T1-R46-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE68039-T1-R46-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 10V |
Frequency - Transition | 10GHz |
Noise Figure (dB Typ @ f) | 1.8dB @ 2GHz |
Gain | 12dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 6V |
Current - Collector (Ic) (Max) | 35mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-253-4, TO-253AA |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE68039-T1-R46-A Weight | Contact Us |
Replacement Part Number | NE68039-T1-R46-A-FT |
MS1008
Microsemi Corporation
MS1014
Microsemi Corporation
MS1015D
Microsemi Corporation
MS1019
Microsemi Corporation
MS1030
Microsemi Corporation
MS1030DE
Microsemi Corporation
MS1051
Microsemi Corporation
MS1076
Microsemi Corporation
MS1076A
Microsemi Corporation
MS1076C
Microsemi Corporation
EPF10K10ATC144-3
Intel
LFXP6C-5TN144C
Lattice Semiconductor Corporation
M1A3PE3000-PQG208I
Microsemi Corporation
M1AFS1500-1FGG676I
Microsemi Corporation
A42MX16-FTQG176
Microsemi Corporation
LFEC10E-4Q208I
Lattice Semiconductor Corporation
EP2AGX45DF29C5N
Intel
EP1S40F1508C7N
Intel
EP1AGX60DF780I6N
Intel
EP2A70F1020C8
Intel