Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE68139-T1-A
Manufacturer Part Number | NE68139-T1-A |
---|---|
Future Part Number | FT-NE68139-T1-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE68139-T1-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 10V |
Frequency - Transition | 9GHz |
Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
Gain | 13.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 8V |
Current - Collector (Ic) (Max) | 65mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-253-4, TO-253AA |
Supplier Device Package | SOT-143 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE68139-T1-A Weight | Contact Us |
Replacement Part Number | NE68139-T1-A-FT |
BFU520XRR
NXP USA Inc.
BFU520XRVL
NXP USA Inc.
BFU530XRR
NXP USA Inc.
BFU530XRVL
NXP USA Inc.
BFU550XRR
NXP USA Inc.
BFU550XRVL
NXP USA Inc.
BFP182RE7764HTSA1
Infineon Technologies
BFG310/XR,215
NXP USA Inc.
BFG325/XR,215
NXP USA Inc.
BFG520/XR,215
NXP USA Inc.
A1425A-PQG100C
Microsemi Corporation
A3PE600-2FGG484
Microsemi Corporation
A3P250-2FGG256
Microsemi Corporation
M1AFS600-1FG256K
Microsemi Corporation
10CL010YM164C6G
Intel
XC7A200T-1FF1156I
Xilinx Inc.
A54SX32A-1BG329M
Microsemi Corporation
LFEC15E-5F256C
Lattice Semiconductor Corporation
LFE2-6SE-6F256C
Lattice Semiconductor Corporation
EP2AGX65CU17I5N
Intel