Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / NSBA113EF3T5G
Manufacturer Part Number | NSBA113EF3T5G |
---|---|
Future Part Number | FT-NSBA113EF3T5G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSBA113EF3T5G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 254mW |
Mounting Type | Surface Mount |
Package / Case | SOT-1123 |
Supplier Device Package | SOT-1123 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBA113EF3T5G Weight | Contact Us |
Replacement Part Number | NSBA113EF3T5G-FT |
MUN2211T1G
ON Semiconductor
MMUN2133LT1G
ON Semiconductor
MMUN2113LT1G
ON Semiconductor
MMUN2231LT1G
ON Semiconductor
MUN2211T3G
ON Semiconductor
MMUN2213LT1G
ON Semiconductor
MMUN2215LT1G
ON Semiconductor
MUN2214T1G
ON Semiconductor
MUN2233T1G
ON Semiconductor
MUN2113T1G
ON Semiconductor
XC6SLX150-3FGG484I
Xilinx Inc.
APA450-FGG256I
Microsemi Corporation
AT40K10-2CQC
Microchip Technology
10CL055YF484C8G
Intel
EP4CGX15BF14C6
Intel
AGL600V2-CSG281I
Microsemi Corporation
APA300-FGG144M
Microsemi Corporation
LFXP6E-4FN256C
Lattice Semiconductor Corporation
LFX125EB-04F256I
Lattice Semiconductor Corporation
10AX016E3F27I1SG
Intel