Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / NSBA123TF3T5G
Manufacturer Part Number | NSBA123TF3T5G |
---|---|
Future Part Number | FT-NSBA123TF3T5G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSBA123TF3T5G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 254mW |
Mounting Type | Surface Mount |
Package / Case | SOT-1123 |
Supplier Device Package | SOT-1123 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBA123TF3T5G Weight | Contact Us |
Replacement Part Number | NSBA123TF3T5G-FT |
NSVMMUN2232LT1G
ON Semiconductor
SMMUN2214LT1G
ON Semiconductor
MMUN2116LT1G
ON Semiconductor
SMMUN2213LT1G
ON Semiconductor
MMUN2112LT1G
ON Semiconductor
MUN2213T1G
ON Semiconductor
NSVMMUN2212LT1G
ON Semiconductor
SMMUN2113LT1G
ON Semiconductor
SMMUN2114LT1G
ON Semiconductor
SMUN2114T1G
ON Semiconductor
A3P030-1QNG68
Microsemi Corporation
M2GL050S-1FGG484I
Microsemi Corporation
LFE2-70E-5F900I
Lattice Semiconductor Corporation
10M50DAF256C6GES
Intel
5SGSMD4K3F40I3N
Intel
XC7VX415T-3FFG1157E
Xilinx Inc.
XC6VLX550T-2FFG1760C
Xilinx Inc.
LCMXO2-4000HE-6BG332C
Lattice Semiconductor Corporation
LCMXO2-640ZE-2MG132I
Lattice Semiconductor Corporation
EP20K100EQC240-1N
Intel