Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSBC123JPDXV6T1

            | Manufacturer Part Number | NSBC123JPDXV6T1 | 
|---|---|
| Future Part Number | FT-NSBC123JPDXV6T1 | 
| SPQ / MOQ | Contact Us | 
| Packing Material | Reel/Tray/Tube/Others | 
| Series | - | 
| NSBC123JPDXV6T1 Status (Lifecycle) | In Stock | 
| Part Status | Obsolete | 
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | 
| Current - Collector (Ic) (Max) | 100mA | 
| Voltage - Collector Emitter Breakdown (Max) | 50V | 
| Resistor - Base (R1) | 2.2 kOhms | 
| Resistor - Emitter Base (R2) | 47 kOhms | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V | 
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | 
| Current - Collector Cutoff (Max) | 500nA | 
| Frequency - Transition | - | 
| Power - Max | 500mW | 
| Mounting Type | Surface Mount | 
| Package / Case | SOT-563, SOT-666 | 
| Supplier Device Package | SOT-563 | 
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN | 
| NSBC123JPDXV6T1 Weight | Contact Us | 
| Replacement Part Number | NSBC123JPDXV6T1-FT | 

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