Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSVB123JPDXV6T1G
Manufacturer Part Number | NSVB123JPDXV6T1G |
---|---|
Future Part Number | FT-NSVB123JPDXV6T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSVB123JPDXV6T1G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVB123JPDXV6T1G Weight | Contact Us |
Replacement Part Number | NSVB123JPDXV6T1G-FT |
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