Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSVBC114YPDXV65G
Manufacturer Part Number | NSVBC114YPDXV65G |
---|---|
Future Part Number | FT-NSVBC114YPDXV65G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSVBC114YPDXV65G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVBC114YPDXV65G Weight | Contact Us |
Replacement Part Number | NSVBC114YPDXV65G-FT |
NSBC114EPDXV6T5G
ON Semiconductor
EMD4DXV6T5G
ON Semiconductor
EMD4DXV6T1G
ON Semiconductor
NSBC115EDXV6T1G
ON Semiconductor
NSBA144WDXV6T1G
ON Semiconductor
NSBC114YDXV6T1G
ON Semiconductor
NSBC144WDXV6T1G
ON Semiconductor
EMF18XV6T5G
ON Semiconductor
NSBA143EDXV6T1G
ON Semiconductor
NSBC114TDXV6T5G
ON Semiconductor
A1010B-2VQ80I
Microsemi Corporation
AGLN030V5-ZQNG48
Microsemi Corporation
EP4SGX530NF45I4
Intel
5AGZME5H3F35C4N
Intel
5SGXEA5K2F35I3LN
Intel
5SGXMA3K3F35C2N
Intel
XC7K480T-1FFG901I
Xilinx Inc.
XC7A200T-1FFG1156I
Xilinx Inc.
A42MX16-3PL84
Microsemi Corporation
M1AFS1500-FGG676I
Microsemi Corporation