Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / NSVDTA115EET1G
Manufacturer Part Number | NSVDTA115EET1G |
---|---|
Future Part Number | FT-NSVDTA115EET1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
NSVDTA115EET1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 100 kOhms |
Resistor - Emitter Base (R2) | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | SC-75, SOT-416 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVDTA115EET1G Weight | Contact Us |
Replacement Part Number | NSVDTA115EET1G-FT |
MUN5111T1G
ON Semiconductor
MUN5234T1G
ON Semiconductor
MUN5131T1G
ON Semiconductor
MUN5232T1G
ON Semiconductor
MUN5214T1G
ON Semiconductor
MUN5236T1G
ON Semiconductor
MUN5133T1G
ON Semiconductor
SMUN5115T1G
ON Semiconductor
MUN5213T1G
ON Semiconductor
MUN5233T1G
ON Semiconductor
XC7A12T-L1CSG325I
Xilinx Inc.
AX250-1FG256M
Microsemi Corporation
M1A3P1000-FG256I
Microsemi Corporation
EP2S60F672C4N
Intel
EP4SE820H40C3N
Intel
XC6VLX75T-L1FF784I
Xilinx Inc.
A40MX02-2PQ100I
Microsemi Corporation
LFE3-95EA-6LFN1156I
Lattice Semiconductor Corporation
5CGXFC4C6F23I7N
Intel
10AX016E4F29I3SG
Intel