Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTD113ES,126

| Manufacturer Part Number | PDTD113ES,126 |
|---|---|
| Future Part Number | FT-PDTD113ES,126 |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| PDTD113ES,126 Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 500mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| PDTD113ES,126 Weight | Contact Us |
| Replacement Part Number | PDTD113ES,126-FT |

FJN3302RBU
ON Semiconductor

FJN3303RBU
ON Semiconductor

FJN3304RBU
ON Semiconductor

FJN3305RBU
ON Semiconductor

FJN3306RBU
ON Semiconductor

FJN3307RBU
ON Semiconductor

FJN3308RBU
ON Semiconductor

FJN3309RBU
ON Semiconductor

FJN3310RBU
ON Semiconductor

FJN3311RBU
ON Semiconductor

A1425A-PQG100C
Microsemi Corporation

XC3S200-5PQ208C
Xilinx Inc.

APA300-CQ352B
Microsemi Corporation

A54SX08A-PQ208
Microsemi Corporation

A54SX08A-PQ208A
Microsemi Corporation

EP4CGX110DF27C8
Intel

10M04DCF256C7G
Intel

5SGXEA3K2F35I3L
Intel

LFXP3C-3QN208I
Lattice Semiconductor Corporation

LCMXO2280C-4FTN324I
Lattice Semiconductor Corporation