Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / PQMD10Z
Manufacturer Part Number | PQMD10Z |
---|---|
Future Part Number | FT-PQMD10Z |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
PQMD10Z Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 230MHz, 180MHz |
Power - Max | 230mW |
Mounting Type | Surface Mount |
Package / Case | 6-XFDFN Exposed Pad |
Supplier Device Package | DFN1010B-6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PQMD10Z Weight | Contact Us |
Replacement Part Number | PQMD10Z-FT |
MUN5316DW1T1
ON Semiconductor
MUN5331DW1T1G
ON Semiconductor
MUN5332DW1T1
ON Semiconductor
MUN5332DW1T1G
ON Semiconductor
MUN5333DW1T1
ON Semiconductor
MUN5334DW1T1G
ON Semiconductor
NSB13211DW6T1G
ON Semiconductor
NSM11156DW6T1G
ON Semiconductor
NSM21156DW6T1G
ON Semiconductor
NSM21356DW6T1G
ON Semiconductor
XC3SD1800A-4CS484I
Xilinx Inc.
XC3042L-8VQ100C
Xilinx Inc.
5SGXMA7K2F35C2LN
Intel
A42MX16-3PLG84
Microsemi Corporation
A42MX09-TQ176A
Microsemi Corporation
LFXP2-17E-5FTN256C
Lattice Semiconductor Corporation
EP2AGX95EF29C4
Intel
EP3CLS70F780C7N
Intel
10AX027E1F27E1HG
Intel
EP20K100QC240-3N
Intel