Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1910,LF(CT
Manufacturer Part Number | RN1910,LF(CT |
---|---|
Future Part Number | FT-RN1910,LF(CT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1910,LF(CT Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1910,LF(CT Weight | Contact Us |
Replacement Part Number | RN1910,LF(CT-FT |
RN4981FE,LF(CT
Toshiba Semiconductor and Storage
RN4982FE,LF(CT
Toshiba Semiconductor and Storage
RN4983FE,LF(CT
Toshiba Semiconductor and Storage
RN4984FE,LF(CT
Toshiba Semiconductor and Storage
RN4986FE,LF(CT
Toshiba Semiconductor and Storage
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
RN4990FE,LF(CT
Toshiba Semiconductor and Storage
RN1901FETE85LF
Toshiba Semiconductor and Storage
RN1909FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2901FE(TE85L,F)
Toshiba Semiconductor and Storage
XC4010XL-1PQ100C
Xilinx Inc.
XC7A50T-1FG484C
Xilinx Inc.
A42MX16-1PQ208I
Microsemi Corporation
LFE2M70E-6F1152I
Lattice Semiconductor Corporation
LCMXO2-256ZE-2SG32I
Lattice Semiconductor Corporation
EP4CGX15BN11C8N
Intel
XC7K410T-1FFG900I
Xilinx Inc.
XC6SLX25-L1CSG324I
Xilinx Inc.
LCMXO3LF-640E-6MG121I
Lattice Semiconductor Corporation
EPF10K100EQC240-3N
Intel