Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN4902FE,LF(CT
Manufacturer Part Number | RN4902FE,LF(CT |
---|---|
Future Part Number | FT-RN4902FE,LF(CT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN4902FE,LF(CT Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz, 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN4902FE,LF(CT Weight | Contact Us |
Replacement Part Number | RN4902FE,LF(CT-FT |
RN2604(TE85L,F)
Toshiba Semiconductor and Storage
RN4606(TE85L,F)
Toshiba Semiconductor and Storage
RN4610(TE85L,F)
Toshiba Semiconductor and Storage
RN4611(TE85L,F)
Toshiba Semiconductor and Storage
RN4605(TE85L,F)
Toshiba Semiconductor and Storage
NUS2401SNT1G
ON Semiconductor
PBLS2003D,115
Nexperia USA Inc.
PBLS2021D,115
Nexperia USA Inc.
PBLS2022D,115
Nexperia USA Inc.
PBLS2023D,115
Nexperia USA Inc.
LFXP2-5E-7TN144C
Lattice Semiconductor Corporation
XC3S500E-4CPG132I
Xilinx Inc.
XC4005E-4PQ208I
Xilinx Inc.
LCMXO2280C-3FT256I
Lattice Semiconductor Corporation
A3PN060-Z2VQ100
Microsemi Corporation
EP1S20F672C6
Intel
EP2C50F672I8N
Intel
5SGXEA9N2F45C2N
Intel
A42MX24-1PQ160I
Microsemi Corporation
LFXP6C-5F256C
Lattice Semiconductor Corporation