Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / S1JVNJD2873T4G
Manufacturer Part Number | S1JVNJD2873T4G |
---|---|
Future Part Number | FT-S1JVNJD2873T4G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
S1JVNJD2873T4G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
Power - Max | 1.68W |
Frequency - Transition | 65MHz |
Operating Temperature | -65°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
S1JVNJD2873T4G Weight | Contact Us |
Replacement Part Number | S1JVNJD2873T4G-FT |
2N5781
Microsemi Corporation
2N5782
Microsemi Corporation
2N5783
Microsemi Corporation
2N5784
Microsemi Corporation
2N5785
Microsemi Corporation
2N5838
Microsemi Corporation
2N5840
Microsemi Corporation
2N5868
Microsemi Corporation
2N5872
Microsemi Corporation
2N5874
Microsemi Corporation