Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / SMSD1002T1G
Manufacturer Part Number | SMSD1002T1G |
---|---|
Future Part Number | FT-SMSD1002T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
SMSD1002T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | - |
Voltage - Collector Emitter Breakdown (Max) | - |
Vce Saturation (Max) @ Ib, Ic | - |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | - |
Power - Max | - |
Frequency - Transition | - |
Operating Temperature | - |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SMSD1002T1G Weight | Contact Us |
Replacement Part Number | SMSD1002T1G-FT |
2N5874
Microsemi Corporation
2N5875
Microsemi Corporation
2N5876
Microsemi Corporation
2N5877
Microsemi Corporation
2N5879
Microsemi Corporation
2N5880
Microsemi Corporation
2N5883
Microsemi Corporation
2N5886
Microsemi Corporation
2N5954
Microsemi Corporation
2N5956
Microsemi Corporation
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Lattice Semiconductor Corporation
10AX066H4F34I3LG
Intel
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Intel